complementary silicon high-power transistors ...for g eneralpurpose power amplifier and switching applications. ? 10 a collector current ? low leakage current e i ceo = 0.7 ma @ 60 v ? excellent dc gain e h fe = 40 typ @ 3.0 a ? high current gain bandwidth product e h fe = 3.0 min @ i c = 0.5 a, f = 1.0 mhz ??????????????????????? ??????????????????????? maximum ratings ???????????? ? ?????????? ? ???????????? rating ???? ? ?? ? ???? symbol ??????? ? ????? ? ??????? tip33c tip34c ??? ? ? ? ??? unit ???????????? ???????????? collectoremitter voltage ???? ???? v ceo ??????? ??????? 100 v ??? ??? vdc ???????????? ???????????? collectorbase voltage ???? ???? v cb ??????? ??????? 100 v ??? ??? vdc ???????????? ???????????? emitterbase voltage ???? ???? v eb ??????? ??????? 5.0 ??? ??? vdc ???????????? ? ?????????? ? ???????????? collector current e continuous peak (1) ???? ? ?? ? ???? i c ??????? ? ????? ? ??????? 10 15 ??? ? ? ? ??? adc ???????????? ???????????? base current e continuous ???? ???? i b ??????? ??????? 3.0 ??? ??? adc ???????????? ? ?????????? ? ???????????? total power dissipation @ t c = 25 c derate above 25 c ???? ? ?? ? ???? p d ??????? ? ????? ? ??????? 80 0.64 ??? ? ? ? ??? watts w/ c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ???? ? ?? ? ???? t j , t stg ??????? ? ????? ? ??????? 65 to +150 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ???? ???? symbol ??????? ??????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ???? ???? r q jc ??????? ??????? 1.56 ??? ??? c/w ???????????? ???????????? junctiontofreeair thermal resistance ???? ???? r q ja ??????? ??????? 35.7 ??? ??? c/w (1) pulse test: pulse width = 10 ms, duty cycle 10%. on semiconductor ? semiconductor components industries, llc, 2002 january, 2002 rev. 1 1 publication order number: tip33c/d tip33c tip34c 10 ampere complementary silicon power transistors 100 volts 80 watts npn pnp case 340d02 to218ac
tip33c tip34c http://onsemi.com 2 figure 1. dc current gain i c , collector current (a) 0.1 1.0 5.0 10 10 20 100 500 h fe , dc current gain 200 50 npn pnp v ce = 4.0 v t j = 25 c ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (1) (i c = 30 ma, i b = 0) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 100 ???? ? ?? ? ???? e ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter cutoff current (v ce = 60 v, i b = 0) ????? ? ??? ? ????? i ceo ??? ? ? ? ??? e ???? ? ?? ? ???? 0.7 ??? ? ? ? ??? ma ?????????????????????? ?????????????????????? collectoremitter cutoff current (v ce = rated v ceo , v eb = 0) ????? ????? i ces ??? ??? e ???? ???? 0.4 ??? ??? ma ?????????????????????? ? ???????????????????? ? ?????????????????????? emitterbase cutoff current (v eb = 5.0 v, i c = 0) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? e ???? ? ?? ? ???? 1.0 ??? ? ? ? ??? ma ????????????????????????????????? ????????????????????????????????? on characteristics (1) ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 1.0 a, v ce = 4.0 v) (i c = 3.0 a, v ce = 4.0 v) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 40 20 ???? ? ?? ? ???? e 100 ??? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (i c = 3.0 a, i b = 0.3 a) (i c = 10 a, i b = 2.5 a) ????? ? ??? ? ? ??? ? ????? v ce(sat) ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 1.0 4.0 ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter on voltage (i c = 3.0 a, v ce = 4.0 v) (i c = 10 a, v ce = 4.0 v) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? e e ???? ? ?? ? ???? 1.6 3.0 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? smallsignal current gain (i c = 0.5 a, v ce = 10 v, f = 1.0 khz) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 20 ???? ? ?? ? ???? e ??? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ?????????????????????? currentgain e bandwidth product (i c = 0.5 a, v ce = 10 v, f = 1.0 mhz) ????? ? ??? ? ????? f t ??? ? ? ? ??? 3.0 ???? ? ?? ? ???? e ??? ? ? ? ??? mhz (1) pulse test: pulse width = 300 m s, duty cycle 2.0%.
tip33c tip34c http://onsemi.com 3 v ce , collector-emitter voltage (volts) 10 20 1.0 50 100 figure 2. maximum rated forward bias safe operating area 1.0 0.1 2.0 secondary breakdown limit bonding wire limit thermal limit 1.0ms dc 300 m s 5.0 3.0 15 10 i c , collector current (amps) 10ms 0.2 0.5 2.0 3.0 5.0 7.0 30 70 t c = 25 c v ce , collector-emitter voltage (volts) 60 0 80 100 figure 3. maximum rated forward bias safe operating area 0 10 15 20 i c , collector current (amps) 5.0 20 40 l = 200 m h i c /i b 5.0 v be(off) = 0 to 5.0 v t c = 100 c forward bias the forward bias safe operating area represents the voltage and current conditions these devices can withstand during forward bias. the data is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10%, and must be derated thermally for t c > 25 c. reverse bias the reverse bias safe operating area represents the voltage and current conditions these devices can withstand during reverse biased turnoff. this rating is verified under clamped conditions so the device is never subjected to an avalanche mode.
tip33c tip34c http://onsemi.com 4 package dimensions case 340d02 issue e style 1: pin 1. base 2. collector 3. emitter 4. collector a d v g k s l u b q 123 4 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. e c j h dim min max min max inches millimeters a --- 20.35 --- 0.801 b 14.70 15.20 0.579 0.598 c 4.70 4.90 0.185 0.193 d 1.10 1.30 0.043 0.051 e 1.17 1.37 0.046 0.054 g 5.40 5.55 0.213 0.219 h 2.00 3.00 0.079 0.118 j 0.50 0.78 0.020 0.031 k 31.00 ref 1.220 ref l --- 16.20 --- 0.638 q 4.00 4.10 0.158 0.161 s 17.80 18.20 0.701 0.717 u 4.00 ref 0.157 ref v 1.75 ref 0.069 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. tip33c/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
|
